- 寬能帶隙半導(dǎo)體
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wide band gap semiconductor中文什么意思
例句與用法
- recently, a great of interest in wide band gap semiconductor of sic, gan and ga2o3 quasi one-dimensional nanbmaterials has been stimulated by the discovery of novel properties and the great potential application in the optical, electrical and mechanical field
近年來寬帶隙半導(dǎo)體sic、gan和ga_2o_3準(zhǔn)一維納米材料已引起了人們極大的興趣，這些納米材料具有許多獨(dú)特的性能并且在光、電及機(jī)械等方面具有極大的應(yīng)用潛能。 - featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices
被譽(yù)為最有潛力的寬禁帶半導(dǎo)體材料一sic，因其具有禁帶寬度大、擊穿電場高、熱導(dǎo)率大、電子飽和漂移速度高、介電常數(shù)小、抗輻射能力強(qiáng)、良好的化學(xué)穩(wěn)定性等優(yōu)異的特性，被廣泛地應(yīng)用于光電器件、高頻大功率、高溫電子器件。 - characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c-sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices
3c-sic被譽(yù)為最有潛力的寬禁帶半導(dǎo)體材料,具有帶隙寬、臨界擊穿電場高、熱導(dǎo)率高、飽和電子漂移速度大等優(yōu)點(diǎn),是高溫、高頻、高功率半導(dǎo)體器件的首選材料。 - this work was supported by the state science and technology ministry of the p . r . china under the contact no . g20000683-06, and by the national natural science foundation of p . r . china under grant no . 60046001 . recently, gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short-wave light-emitting devices, photodetectors, as well as anti-radiation, high frequency and high power electronic devices
本碩士論文是基于國家科技部重點(diǎn)基礎(chǔ)研究發(fā)展規(guī)劃項(xiàng)目(973項(xiàng)目)子課題“硅基寬帶隙異質(zhì)結(jié)構(gòu)材料生長及器件研究”(2000年10月-2005年9月，no.g20000683-06)和國家自然科學(xué)基金(no.60046001)的一部分研究工作。